WP1 is dedicated to “physics-based predictive modeling” using Technology Computer Aided Design (TCAD) tools, which allow the simulation of processing steps and electrical characteristics of devices. Due to the complexity of transport phenomena in nano-scale transistors, advanced device simulation tools (e.g., solution of Boltzmann transport, Schrödinger-Possion solver) from DOTFIVE partners will be used. Based on such advanced TCAD platform, it will be possible to achieve a deep understanding of the electrical behavior of near-terahertz devices and to develop guidelines for doping and architecture optimization. In particular,
WP1 will support continuously the technology development in WP2 and WP3 by, e.g., assessing the achievable performance limits, identifying the critical limitations, and exploring new device concepts and architectures. To make computationally more efficient drift-diffusion and energy-balance based simulators predictive for high performance devices, their physical models for, e.g., carrier transport are obtained from first principles solutions of the Boltzmann transport equation (BTE). Furthermore, WP1 will investigate the ultimate limits of SiGe HBT technology in terms of device performance, transport limits, quantum effects, and safe operation area limitations.