IMEC will also be responsible for training aspects in the project.
People involved in the project
Stefaan Decoutere (MSc degree in Electrical Engineering in 1986 and PhD degree in 1992 at KU-Leuven, Belgium)). He Joined IMEC in 1987, where he was active in high-voltage BCD technology development. From 1992 to 1997, he was in charge of the development of high-speed BiCMOS technologies and SiGe HBT technologies. Since 1998, he has been the head of the Mixed-Signal/RF technology group at IMEC. He has been/is the project coordinator of the IST projects IMPACT and NANO-RF respectively on 90nm RF CMOS and 45nm RFCMOS.
Van Huylenbroeck, S.; Choi, L.J.; Sibaja-Hernandez, A.; Piontek, A.; Linten, D.; Dehan, M.; Dupuis, O.; Carchon, G.; Vleugels, F.; Kunnen, E.; Leray, P.; Devriendt, K.; Shi, X.P.; Loo, R.; Hijzen, E.; Decoutere, S., “A 205/275GHz fT/fmax Airgap Isolated 0.13µm BiCMOS Technology featuring on-chip High Quality Passives”, Bipolar/BiCMOS Circuits and Technology Meeting, 2006