People involved in the project
Bernd Heinemann received the M.S. degree in physics from the Humboldt University zu Berlin, Germany, in 1984, and the Dr.-Ing. degree in electrical engineering from the Technische Universität Berlin, Germany, in 1997. He joined the IHP in Frankfurt (Oder), Germany in 1984. His research activities include the development and characterization of MOS and bipolar devices. Since 1993 he is a member of a team working on the exploration and technological implementation of SiGe HBTs.
H. Rücker, B. Heinemann, R. Barth, J. Bauer, K. Blum, D. Bolze, J. Drews, G. G. Fischer, A. Fox, O. Fursenko, T. Grabolla, U. Haak, W. Höppner, D. Knoll, K. Köpke, B. Kuck, A. Mai, S. Marschmeyer, T. Morgenstern, H. H. Richter, P. Schley, D. Schmidt, K. Schulz, B. Tillack, G. Weidner, W. Winkler, D. Wolansky, H.-E. Wulf, and Y. Yamamototo, “130 nm SiGe BiCMOS Technology with 3.0 ps Gate Delay ", IEDM 2007, p. 651.