Role/activity in the project
In DOTFIVE besides leading the project, STMicroelectronics is involved in all of the activities related to HBT development, characterization, modelling and integration into a manufacturable technology. From this technology circuit designers from other DOTFIVE partners will generate RF demonstrator circuits blocks representative of the elements found in final commercial ICs . The work in DOTFIVE is performed by the teams located at Crolles site.
People involved in the project
Gilles Thomas obtained a Ph D in solid state Physics from University Of Grenoble (France) in 1977. He started his career with Materials Research Corporation (MRC) then moved to Matra-Harris Semiconductors (80-82) and later joined Thomson-CSF in 1982 which later on in 1987 became STMicroelectronics (merger with SGS-ATES). Since 1982 he has held various positions in R & D (BICMOS technology development) and manufacturing fabs of ST in Europe (Grenoble and Crolles), USA (Carrollton TX 95-02), and recently as Technical Director of AMK6 fab in Singapore (2004-2005). He has authored several papers in international journals and holds 7 patents.
Alain Chantre received the engineering degree in physics from the Institut National des Sciences Appliquées de Lyon, France, in 1976, and the Ph.D. degree from the Université Scientifique et Médicale de Grenoble, France, in 1979. His doctoral research concerned deep level optical spectroscopy (DLOS) in GaAs. He joined the Centre National d'Etudes des Télécommunications (CNET), Grenoble, in 1979. He worked from 1979 to 1985 at the CNET Grenoble laboratory and during 1985-1986 at AT&T Bell Laboratories, Murray Hill, NJ, on deep level defects in silicon. From 1986 to 1992, he was in charge of a group working on the characterization of advanced silicon processes and devices. From 1993 to 1999, he has been working within the GRESSI consortium between France Telecom CNET and CEA-LETI, as head of a group involved in the development of advanced bipolar devices for submicron BiCMOS technologies. He joined ST Microelectronics, Crolles, in 2000, where he is currently managing the development of advanced SiGe bipolar devices and technology for RF and optical communications applications. He has published about 150 technical papers related to his research, and holds 20 patents.
Didier Céli graduated from Ecole Supérieure d’Electricité in 1981. In 1982 he joined the semiconductor division of Thomson-CSF, then after the central R&D of SGS-Thomson Microelectronic, now ST Microelectronics, Crolles (France). He has worked in the field of modeling for advanced Bipolar and BiCMOS technologies, including model development, parameter measurement and extraction tools. Presently, he is responsible for BiCMOS device modeling as project manager. D. Céli was member of the CAD/Modeling subcommittee of IEEE Bipolar/BiCMOS and Technology Meeting (BCTM) from 1998-2004. He has authored or co-authored several technical papers related to his research.
Thierry Schwartzmann received the Ph.D. in physics from the University of Dijon (France) in January 1995. After two years of teaching in the fields of physics and electronics he joined STMicroelectronics (ST) in 1996 in the Central R&D Technology Modeling group where he was in charge of technology and device simulations for the advanced BiCMOS technologies. He has been involved as technical expert in the European project PROMPT-II (ESPRIT 24038) and as WP leader in the project MAGIC_FEAT (IST-1999-11433). He is now acting as technology modeling expert in the Modeling group (ST, Crolles site) where he is responsible for the TCAD modeling activity which supports the development of advanced HBT devices.