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General description

Infineon Technologies focuses on the three main areas: Energy Efficiency, Communications and Security. Therefore it offers semiconductors and system solutions for automotive, industrial electronics, chip card and security as well as applications in communications. Furthermore, the company offers memory products throught its subsidiary Qimonda.
Infineon’s products stand out for their reliability, their quality excellence and their innovative and leading-edge technology in analog and mixed signal, RF and power as well as embedded control. A strong technology portfolio with about 22,900 patents and applications is characteristic for the company.
With a global presence, Infineon operates through its subsidiaries in the USA from Milpitas, California, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In 2007 fiscal year (ending September 2007) the company achieved more than EUR 4 bn in revenues.

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Role/activity in the project

Based on more than 30 years of experience in developing and manufacturing high frequency bipolar and bicmos processes and circuits Infineon will be the first company to provide automotive qualified SiGe radar MMICs capable to operate in 76-81 GHz range. They will be manufactured in our new Silicon Germanium Bipolar Technology “B7HF200”.  Key device of the process is a SiGe:C high frequency npn with intrinsic cut-off-frequencies ft and fmax of 200 GHz and 250 GHz respectively.

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Contact

Dr. Rudolf  Lachner

Technical manager Infineon

People involved in the project


Rudolf Lachner received the diploma and PhD degrees in physics from Technical University Munich, Germany, in 1978 and 1984 respectively.  He joined Infineon Technologies in 1984 where he first was engaged in process development and integration of high speed bipolar processes. Later on he took over responsibility for the development of Infineon's leading edge Silicon and Silicon-Germanium bipolar and bicmos processes. As a Senior Principal in the field of RF technologies his main research interests are currently in pushing the limits of SiGe technology into the Terahertz region and paving the way to broad usage of Si based mmwave technology in new safety and communication applications. He has filed several patents and authored or co-authored many publications in this field.

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Thomas F. Meister  received the diploma and the Ph.D degrees in physics from the University of Aachen, Germany, in 1978 and 1981. From 1981 to 1985 he was with the Kernforschungsanlage Jülich, Germany. In 1985 he joined the Corporate Research and Development of Siemens AG, Munich, Germany. He is now with Infineon Technologies, the former Semiconductor Division of Siemens. Since 1994 he is working on the development of advanced SiGe bipolar technologies. He has contributed to more than 100 technical papers related to his research and holds several patents.

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Herbert Schäfer received the diploma and the Ph.D degrees in physics from the University of Göttingen, Germany, in 1980 and 1983. He joined Siemens in 1984 where he first worked in the Corporate Research and Development department on III-V semiconductor devices for the optical data communication. Since 1990 he is engaged in the development of fabrication processes for advanced Si technologies. His main focus is Silicon and Silicon-Germanium epitaxy for strained CMOS and hetero bipolar transistors. He holds several patents and authored or co-authored many publications in the field.

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Klaus Aufinger received the diploma and the Ph. D. degrees in physics from the University of Innsbruck, Austria, in 1990 and 2001, respectively. From 1990 to 1991 he was a Teaching Assistant with the Institute of Theoretical Physics, University of Innsbruck. In 1991, he joined the Corporate Research and Development of Siemens AG, Munich, Germany, where he investigated noise in submicron bipolar transistors. Now he is with Infineon Technologies, the former semiconductor group of Siemens, Munich, working in the field of device physics and modeling of advanced SiGe technologies for high-speed digital and analog circuits. He has authored or coauthered more than 90 technical papers, has served as reviewer for several scientific journals and was a member of the technical program committee of the IEEE IEDM. He also gives lectures on bipolar device modeling at the Technical University of Munich.

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Herbert Knapp received the Diploma and Ph.D. degrees in Electrical Engineering from the Technical University Vienna, Austria, in 1997 and 2000. In 1993 he joined Siemens, Corporate Technology, in Munich, Germany, where he worked on circuits for wireless communications and high-speed data transmission.
He is now with Infineon Technologies, Munich, Germany, and is engaged in the design of millimeterwave circuits for automotive radar applications.

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