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Paper journals

 

Title Main authorTitle of the periodical or the seriesYear of publicationRelevant pages

A Deterministic Boltzmann Equation Solver Based on a Higher Order Spherical Harmonics Expansion With Full-Band Effects

S.-M. Hong, G. Matz, and C. Jungemann, 

Transaction on Electron Devices, 

October 2010

Vol.57, n.10,p. 2390-2397

Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress

1.T. V. Dinh, S.-M. Hong, C. Jungemann

Solid-State Electronics

June 2011

Vol.60, Issue 1,p.58-64,

Modeling of NPN-SiGe-HBT Electrical Performance Improvement through

M. Al-Sa’di, S. Fregonese, C. Maneux, and T. Zimmer

ECS Transactions, 33 (6)

2010

p.191-199, 

Half-Terahertz Silicon/Germanium Heterojunction Bipolar Technologies

A. Sibaja-Hernandez, S. You, S. Van Huylenbroeck, R. Venegas, K. De Meyer1, and S. Decoutere

Solid-Sate Electronics

2011

 

Recombination in the Ge-spiked monoemitter of the SiGe

S. You, S. Decoutere, A. Sibaja-Hernandez, R. Venegas, S. Van Huylenbroeck, and K. De Meyer

HBTs, Solid State Electronics

2011

Vol.61, No. 1,p. 81-86, 

Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs

G. Sasso, M. Costagliola and N. Rinaldi

Microelectronics Reliability

 

Vol.50, Issues 9-1,p. 1577-1580

TCAD Modeling of NPN-Si-BJT Electrical Performance Improvement Through SiGe Extrinsic Stress Layer

M.Al-Sa’di, S.Fregonese, C.Maneux, T. Zimmer

Journal of Materials Science in Semiconductor Processing

  

Physical and electrical performance limits of high-speed SiGeC HBTs – Part I: Vertical scaling

M. Schroter, G. Wedel, B. Heinemann, C. Jungemann, J. Krause, P. Chevalier, A. Chantre

IEEE Transactions of Electron Devices

  

Physical and electrical performance limits of high-speed SiGeC HBTs – Part II: Lateral scaling

M. Schroter, J. Krause, N. Rinaldi, G. Wedel, B. Heinemann, P. Chevalier, A. Chantre

IEEE Transactions of Electron Devices

  

Advanced Process Modules and Architectures for Half-Terahertz SiGe:C HBTs

S. Decoutere

BCTM

2009

p.9-16

Pushing the Speed Limits of SiGe:C HBTs up to 0.5 THz

S. Decoutere

CICC

2009

p.347-354

A 400 GHz fmax fully self-aligned SiGe:C HBT architecture

S. Van Huylenbroeck

BCTM

2009

p.5-8

TCAD based Device Architecture exploration towards Half-Terahertz Silicon/germanium heterojunction bipolar technology

A. Sibaja-Hernandez

ESSDERC

2010

p.246-249

Recombination in the Ge-spiked monoemitter of the SiGe:C HBTs

S. You

Solid-State Electronics

2011

p.81-86

Arsenic-doped Ge-spiked monoemitter SiGe:CHBTs by means of low-temperature trisilane based epitaxy

S. You

ICSI-7

2011

 

Impact of Isolation Scheme on Thermal Resistance and Collector-substrate Capacitance of SIGe HBTs

S. You

ESSDERC

2011

p.243-246

Pedestal Collector Optimization for High Speed SiGe:C HBT

S. Van Huylenbroeck

BCTM

2011

 

A Deterministic Boltzmann Equation Solver Based on a Higher Order Spherical Harmonics Expansion With Full-Band Effects

S.-M. Hong, G. Matz, and C. Jungemann, 

Transaction on Electron Devices, 

October 2010

p.2390-2397,vol. 57,n.10,

Modeling of NPN-SiGe-HBT Electrical Performance Improvement through

M. Al-Sa’di, S. Fregonese, C. Maneux, and T. Zimmer

ECS Transactions, 33 (6)

2010

p.191-199, 

Recombination in the Ge-spiked monoemitter of the SiGe

S. You, S. Decoutere, A. Sibaja-Hernandez, R. Venegas, S. Van Huylenbroeck, and K. De Meyer

HBTs, Solid State Electronics

2011

Vol.61, No.1,p. 81-86, 

Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs

G. Sasso, M. Costagliola and N. Rinaldi

Microelectronics Reliability

 

Vol.50,Issues 9-11,p. 1577-1580

TCAD Modeling of NPN-Si-BJT Electrical Performance Improvement Through SiGe Extrinsic Stress Layer

M.Al-Sa’di, S.Fregonese, C.Maneux, T. Zimmer

Journal of Materials Science in Semiconductor Processing

 

Vol.53, Issue 9, p.2321-2326

Physical and electrical performance limits of high-speed SiGeC HBTs – Part II: Lateral scaling

M. Schroter, J. Krause, N. Rinaldi, G. Wedel, B. Heinemann, P. Chevalier, A. Chantre

IEEE Transactions of Electron Devices

 

Vol.58, Issue 11,p. 3697-3706

Deterministic solvers for the Boltzmann transport equation

S.M. Hong, A.T. Pham, C. Jungemann

Computational Microelectronics

2011

1st Edition 2011, XVIII, 227 p.125

fmax increase to 500 GHz of SiGe HBTs at low temperature

N. Zerounian, M. Diallo, F. Aniel, P. Chevalier, A. Chantre

ECS Transactions

2010

Vol. 33, No.6,p.311-318

Highly integrated 79, 94, and 120-GHz SiGe Radar Frontends

M. Jahn, A. Stelzer, A. Hamidipour

MTT-S Int. Microwave Symp. Dig. 2010

May 2010

p.1324-1327

Highly-Integrated Multi-Channel Radar Sensors in SiGe Technology for Automotive Frequencies and Beyond

A. Stelzer, R. Feger, M. Jahn

ICECom 2010 Conference Proc.

Sept. 2010

p.1-11

On-wafer Passives De-Embedding Based on Open-Pad and Transmission Line Measurement 

A. Hamidipour, M. Jahn, F. Starzer, X. Wang, A. Stelzer

IEEE Bipolar/BiCMOS Circuits and Technology Meeting 2010

Oct. 2010

p.102-105

DC-Offset Compensation Concept for Monostatic FMCW Radar Transceivers

M. Jahn, C. Wagner, A. Stelzer

IEEE Microwave and Wireless Components Letters

Sept. 2010

Vol.20, No.9,p. 525-527

A 122-GHz SiGe-Based Signal-Generation Chip Employing a Fundamental-Wave Oscillator With Capacitive Feedback Frequency-Enhancement

M. Jahn, H. Knapp, A. Stelzer

IEEE Journal of Solid-State Circuits

Sept. 2011

Vol.46, No.9,p. 2009-2020

A 120-GHz FMCW Radar Frontend Demonstrator Based on a SiGe Chipset

M. Jahn, A. Hamidipour, Z.Tong, and A. Stelzer

European Microwave Conference 2011

Oct. 2011

 

A Four-Channel 94-GHz SiGe-Based Digital Beamforming FMCW Radar

M.Jahn, R. Feger, C. Wagner, Z.Tong, A. Stelzer

Transactions  MTT

(Special Issue on

mm-Wave Circuits and Systems)

2012

to be published

 Advanced process modules and architectures

S. Decoutere, S. Van Huylenbroeck, B. Heinemann, A. Fox, P. Chevalier, A. Chantre, T. F. Meister, K. Aufinger and M. Schroter, terahertz SiGeC HBTs“, 

Proceedings BCTM,

 

p.9-16, 2009. Invited

Pushing the speed limits of SiGeC HBTs up to 0.5 THz

S. Decoutere, S. Van Huylenbroeck, B. Heinemann, A. Fox, P. Chevalier, A. Chantre, T. F. Meister, K. Aufinger and M. Schroter

Proceedings CICC

 

p.347-354, 2009. Invited

A 400 GHz fmax fully self-aligned SiGeC HBT architecture

S. Van Huylenbroeck, A. Sibaja-Hernandez, R. Venegas, S. You, G. Winderickx, D. Radisic, W. Lee, P. Ong

Proceedings BCTM

 

p.5-8, 2009

Millisecond annealing of high-performance SiGe HBTS

D. Bolze, B. Heinemann, J. Gelpy, F. McCoy, W. Lerch

17th IEEE RTP

 

pp.1-11,  2009

SiGe HBT module with 2.5 ps gate delay

A. Fox et al

IEDM

 

p.731-734,2008

Advanced Architectures for High Performance SiGe HBTs

A. Fox et al

ISTDM,

 

ISTDM, 2010 

Solid-phase epitaxy of amorphous silicon by in-situ post-annealing using RPCVD

O. Skibitzki et al

ISTDM,

 

ISTDM, 2010

SiGe HBT Technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML Gate Delay

Heinemann et al

IEDM

 2010

p.688-691,2010

Double-polysilicon SiGe HBT architecture with lateral base link,

 

Solid State Electronics 60

 

pp.93-99, 2011

Impact of isolation scheme on thermal resistance and collector-substrate capacitance of SiGe HBTs

S. You et al

ESSDERC

September 2011 

Pedestal Collector Optimization for High Speed SiGe:C HBT

S. Van Huylenbroeck et a

BCTM

October 2011

 

SiGe:C HBT Architecture with Epitaxial External Base

A. Fox et al

BCTM

October 2011

 

Impact of isolation scheme on thermal resistance and collector-substrate capacitance of SiGe HBTs

S. You et al

ESSDERC

September 2011

 

Pedestal Collector Optimization for High Speed SiGe:C HBT

S. Van Huylenbroeck et a

BCTM

October 2011

 

SiGe:C HBT Architecture with Epitaxial External Base

A. Fox et al

BCTM

October 2011

 

The HiCUM Bipolar Transistor Model, book chapter contribution in “Compact Modeling, Principles, Techniques and Applications”

Michael Schroter and Bertrand Ardouin

book chapter

2010

 

Modeling and Parameter Extraction of SiGe:C HBT’s with HICUM for the Emerging Terahertz Era

B. Ardouin, C. Raya, M. Schroter, A. Pawlak, D. Céli, F. Pourchon, K. Aufinger, T. F. Meister, T. Zimmer 

@ European Microwave conference

2010

 

Improving Parasitic Emitter resistance Determination Methods for Advanced SiGe:C HBT Transistor

C. Raya, B. Ardouin, Z. Huszka,

BCTM 2011

2011

 

Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology

Erik Öjefors, Bernd Heinemann, and Ullrich R. Pfeiffer

IEEE Transactions of Microwave Theory and Techniques

2011

p.1311-1318

A 160-GHz low-noise downconversion receiver front-end in a SiGe HBT technology

Erik Öjefors, Franck Pourchon, Pascal Chevalier, and Ullrich R. Pfeiffer

International Journal of Microwave and Wireless Technologies

2011

p.347-355

A 160-GHz Subharmonic Receiver in  a SiGe HBT Technology

Erik Öjefors, Klaus Aufinger, Thomas Meister, and Ullrich R. Pfeiffer

IEEE Transactions of Microwave Theory and Techniques

2010

 

SiGe HBT module with 2.5 ps gate delay

A. Fox, B. Heinemann, et al.

IEDM

2008

p.731 - 734

SiGe HBT Technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML Gate Delay

B. Heinemann et al.

IEDM

2010

p.688 - 691

Advanced Architectures for High Performance SiGe HBTs

A. Fox and B. Heinemann

ISTDM

May 2010

Vol.96, Issue 9, p.1656-1668

Solid-phase epitaxy of amorphous silicon by in-situ postannealing using RPCVD

Oliver Skibitzki et al.

ISTDM

2010

 

Double-polysilicon SiGe HBT architecture with lateral base link 

A. Fox, B. Heinemann and H. Rücker

Solid State Electronics

2011

Vol.60, Issue 1, p.93-99

SiGe:C HBT Architecture with Epitaxial External Base

A. Fox, B. Heinemann, et al.

BCTM

2011

 

Millisecond annealing of high-performance SiGe HBTs

D. Bolze, B. Heinemann, J. Gelpy, F. McCoy, W. Lerch

RTP 2009

2009

p.1-11

Pushing Conventional SiGe HBT Technology Towards ‘Dotfive’ Terahertz

A. Chantre, P. Chevalier, T. Lacave, G. Avenier, M. Buczko, Y. Campidelli, L. Depoyan, L. Berthier, C. Gaquière

EuMiC 2010

 2010

p.21-24

A Conventional Double-Polysilicon FSA-SEG Si/SiGe:C HBT Reaching 400 GHz fMAX

P. Chevalier, F. Pourchon, T. Lacave, G. Avenier, Y. Campidelli, L. Depoyan, G. Troillard, M. Buczko, D. Gloria, D. Céli, C. Gaquière, A. Chantre

BCTM 2009

 2009

p.1-4

Towards THz SiGe HBTs

P. Chevalier, T.F. Meister, B. Heinemann, S. Van Huylenbroeck, W. Liebl, A. Fox, A. Sibaja-Hernandez and A. Chantre

BCTM 2011

 2011

 

Vertical Profile Optimization for +400 GHz fMAX Si/SiGe:C HBTs

T. Lacave, P. Chevalier, Y. Campidelli, M. Buczko, L. Depoyan, L. Berthier, G. Avenier, C. Gaquière, A. Chantre

BCTM 2010

 2010

p.49-52

Influence of the Selectively Implanted Collector Integration on +400 GHz fMAX Si/SiGe:C HBTs

T. Lacave et al

ECS-SiGe 2010

 2010

 

 

 

Other dissemination activities

Type of activities (choose from drop down list)Main leaderTitleDatePlace
Conference JungemannElectron Transport in Extremely Scaled SiGe HBTs2010BCTM 2009, Capri, Italy 
Conference M., Schroeter, C., Jungemann, Modeling of SiGe Heterojunction Bipolar Transistor at Extreme Temperature Environment2010ICNF 2009, Pisa, Italy
ConferenceJungemann Improving the high frequency performance of SiGe HBTs by a global additional uniaxial stress inh, T. V., Hong, S.-M., Jungemann, C.: Improving the high frequency performance of SiGe HBTs by a global additional uniaxial stress, ISTDM 2010, Stockholm, Sweden2010ISTDM 2010, Stockholm, Sweden
ConferenceJungemann "Spherical Harmonics Expansion of the Conduction Band for Deterministic Simulation of SiGe HBTs with Full Band Effects"2010ISPAD 2010, Pages 167—170, Bologna, Italy
 Jungemann "Investigation of transport and noise in terahertz SiGe HBTs based on deterministic spherical harmonics expansion of the Boltzmann transport equation"2010UFPS 2010, Vilnius, Litauen 
ConferenceimecBCTM oct-09Italy
ConferenceimecCICCsept-09USA
ConferenceimecESSDERCsept-10Spain
ConferenceimecICSI-7August 11Belgium
ConferenceimecESSDERCsept-11Finland
ConferenceimecBCTM oct-11USA
ConferenceZerounianfmax increase to 500 GHz of SiGe HBTs at low temperatureoct-10Las Vegas, USA. 4th International SiGe & Ge: Materials, Processing, and Device Symposium of the Joint International Meeting of the 218th Meeting of ECS
ConferenceJahnHighly integrated 79, 94, and 120-GHz SiGe Radar FrontendsMay 2010California, USA
ConferenceHamidipourOn-wafer Passives De-Embedding Based on Open-Pad and Transmission Line MeasurementOct. 2010Texas, USA
ConferenceStelzerHighly-Integrated Multi-Channel Radar Sensors in SiGe Technology for Automotive Frequencies and Beyondsept-10Dubrovnik, Croatia
VideoJahn0.5 THz Silicon Technologies for Advanced Radar Applications February 11Leuven, Belgium
ConferenceJahnA 120-GHz FMCW Radar Frontend Demonstrator Based on a SiGe ChipsetOct. 2011Manchester, GB
WorkshopStelzerCATT-Training (www.catt.at)Oct. 2008Linz, Austria
Press releaseStelzerSucess stroyMay 2010Linz, Austria
ConferenceUoW (IHP)IEEE RFIC Symp. “A 220GHz Subharmonic Receiver Front End in a SiGe HBT Technology”June 11Baltimore, USA
WorkshopUoWIEEE IMS Workshop. “Silicon Solutions for Sub-Millimeter Wave Active Imaging”June 11Baltimore, USA
ConferenceUoWIEEE NEWCAS. “Towards 3D-Imaging with Low-Cost SiGe Technology at 160 GHz”June 11Bordeaux, France
ConferenceUoW (IHP)IEEE ISSCC. “A 820GHz SiGe Chipset for Terahertz Active Imaging Applications”February 11San Francisco, USA
ConferenceUoW (ST)European Microwave Conf. “A 160-GHz lownoise downconverter in a SiGe HBT technology”oct-10Paris, France
WorkshopUoWIEEE IMS Workshop on Millimeter-Wave SiGe/CMOS and III-V Chips and Imaging Systems “Terahertz Imaging with SiGe and CMOS Focal-Plane Arrays”May 2010Anaheim, USA
WorkshopUoWIEEE IMS Workshop on Silicon-Based Technologies for Millimeter-Wave Applications, “Terahertz Imaging with SiGe and CMOS Focal-Plane Arrays”May 2010Anaheim, USA
ConferenceUoW (IHP)IEEE RFIC Symp. “A 325 GHz Frequency Multiplier Chain in a SiGe HBT Technology”May 2011Anaheim, USA
ConferenceUoW (IHP)German Microwave Conf. “A 52-58 GHz Signal Generation IC for Emerging mmWave Applications in SiGe:C BiCMOS Technology.”March 10Berlin, Germany
ConferenceUoW (IHP)IEEE ISSCC, “A SiGe Quadrature Transmitter and Receiver Chipset for Emerging High-Frequency Applications at 160 GHz”February 10San Francisco, USA
ConferenceUoW (IHP)IEEE ISSCC, “A 650 GHz SiGe Receiver Front-End for Terahertz Imaging Arrays”February 10San Francisco, USA
ConferenceFoxSiGe HBT module with 2.5 ps gate delayDec. 2008USA
ConferenceHeinemannSiGe HBT Technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML Gate DelayDec. 2010USA
ConferenceFoxAdvanced Architectures for High Performance SiGe HBTsMay. 2010Sweden
WorkshopHeinemannArchitecture Choices for High-Speed BiCMOSJan. 2011Belgium
ConferenceBolzeMillisecond annealing of high-performance SiGe HBTsSept. 2009USA
ConferenceSkibitzkiSolid-phase epitaxy of amorphous silicon by in-situ postannealing using RPCVDMay. 2010Sweden
ConferenceFoxSiGe:C HBT Architecture with Epitaxial External BaseOct 2011USA

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