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WP1 results for the year 3

Most of the work in WP1 in the period has focussed on the investigation of physical limits of SiGe HBTs (BU, TUD, UN). Taking advantage of the unique TCAD infrastructure that has been developed in WP1, this analysis covers different aspects (device simulation based on Boltzmann solvers and HD solvers, 2D/3D parasitics extraction, thermal analysis, experimental verification, Safe-Operating-Area analysis…).


Under the coordination of M. Schroter, a joint paper about the ultimate physical limits of SiGe HBTs was written and accepted for publication on IEEE Trans. on Elect. Dev.