- ST’s SiGe HBT technology has reached transit frequencies fT and fmax of 260 GHz and 340 GHz respectively, which outperforms the initial project objectives for the first phase (300 GHz fmax).
- Using the new phosphorus doped emitter module and a low thermal budget process, a record transit frequency performance of 410 GHz has been demonstrated by ST
- SiGe HBTs providing an fT of 200 GHz, an fmax of 300 GHz and a minimum gate delay time tD of 3.3 ps have been realized together e.g. with high voltage transistors exhibiting breakdown voltages of BVCB0 = 15 V and BVCE0 = 4.3 V. (IFX)
- The first year circuit building blocks have been fabricated in IFX technology and delivered to the WP5 partners UoW, JKU, and IFX.