A substantial portion of the work in the first year focussed on the development of a reliable TCAD platform for predictive simulation. To this end, transport parameters for biaxial-strained SiGe on Si for Drift-Diffusion (DD) and Hydrodynamic (HD) device simulation were generated at BU by means of full-band Monte Carlo (MC) simulation. The parameters depend on lattice temperature, Germanium content, doping concentration and E-field/carrier temperature. Using multi-linear interpolation with respect to the non-field dependent variables and Akima-Spline interpolation with respect to the field-dependent we have made them available in a table form for the DD/HD simulation tool. An example is shown in Fig. 10 and 11 below.