Structure de mise en forme 2 colonnes

General description

The university Paris-Sud (UPS, also University Paris 11) has a complete array of competences, ranging from the purest of exact sciences to clinical practices in medicine, and covering life and health sciences, legal sciences and economics. The Institut d’Electronique Fondamentale (IEF) is a joint research unit between the CNRS and UPS, located at the scientific center of Orsay. It is composed of about 85 researchers, professors and assistant-professors, 52 engineers, technicians and administratives, and 100 PhD students, post-doctorate and invited researchers. The research carried out at IEF focuses on silicon-based nano-electronics, nano-magnetism and spin electronics, micro-nanophotonics and optoelectronics either based on silicon or III-V semiconductors, microsystems, and autonomous systems and network systems. In the French Network of Large Technological Facilities for Basic Technological Research, IEF drives a University Technological Center for training and for internal and external research activities.


Nicolas Zerounian

+33 1 691 54054

Institut d’Electronique Fondamentale,

Univ Paris-Sud, bat. 220,

91405 ORSAY Cedex

Role/activity in the project

In DOTFIVE, IEF brings is long experience in transistor characterization and modeling, both the bipolar and the field effect transistors, both in III-V based and in silicon-based transistors, with a special attention toward room and low temperature investigations.

People involved in the projec

Nicolas Zerounian graduated from the Ecole Normale Supérieure de Cachan, France, in 1995 and received the Ph.D. degree in electrical engineering from the University Paris-Sud, Orsay, in 2000. Since 2002, he is associate professor at UPS. His research interests include high-frequency behaviors of bipolar and field-effect transistors on IV-IV and III-V semiconductor at room and low temperature.



Frédéric Aniel received the Ph.D. degree from the University Paris-Sud, Orsay, France, in 1994. In 1991, he was involved with MOS circuit design with Aerospatiale. In 1995, he was involved with InP HBT development with France-Telecom CNET. He is currently a Professor with UPS, where he heads a research team at IEF concerned with the analysis of physical phenomena in very high-frequency devices.