Role/activity in the project
UN is involved in WP1 (WP leader) and WP4. The research activity in WP1 include 3D thermal simulation (goal: understand thermal properties of SiGe HBTs, and the effect of scaling); Safe-Operating-Area analysis by 2D and 3D electro-thermal simulation (goal: investigate the SOA limiting effects in aggressively scaled devices). The research activity in WP4 include: development of predictive dynamic thermal models of SiGe HBTs including multi-finger structures.
People involved in the project
Niccolò Rinaldi (M’95) graduated (cum laude) from the University of Naples "Federico II," Italy, in 1990, and received the Ph.D. degree in 1994. In February 1994, he became a Research Assistant at the University of Naples "Federico II." In November 1998 he has been appointed Associate Professor at the University of Naples "Federico II," and since November 2002 he has been Full Professor. He currently is member of the scientific committee of the IEEE Bipolar/BICMOS Circuits and Technology Meeting, vice-chairman of the IEEE Electron Device Chapter (Central & South Italy Section), and vice-chair of the Italian Doctorate School of Electronics.
Vincenzo d'Alessandro received the “Laurea” and Ph.D. degrees in electronics engineering from the University of Naples “Federico II,” Naples, Italy, in 1999 and 2003, respectively. In May 2006, he has been appointed Assistant Professor at the same University. His current research area is in electrothermal and thermal modeling/simulation of semiconductor devices. Dr. d’Alessandro has coauthored 60 papers in refereed international journal and conferences.
Ilaria Marano graduated (summa cum laude) in Electronics Engineering from the University of Naples “Federico II” in 2004. From August 2005 to May 2006 she has been working with STMicroelectronics, Arzano Naples, Italy. Since November 2005 she is also working toward her Ph.D. at the Department of Electronics and Telecommunications Engineering, University of Naples “Federico II”. Her current research activity deals with analytical/numerical thermal modeling of trench-isolated bipolar transistors fabricated on conventional and SOI substrates.
Grazia Sasso was born in Naples, Italy, on January 26, 1983. She received the Bachelor’s degree in electronics engineering (cum laude) in December 2004 and the Master’s degree in electronics engineering (cum laude) in May 2007. Since November 2007 she joined the Department of Electronics and Telecommunications Engineering of University “Federico II” where she has started working toward the Ph.D. degree. Her field of interest is in experimental characterization and numerical simulation of state-of-art SiGe Heterojunction Bipolar Transistors for high frequency applications.
Maurizio Costagliola graduated (summa cum laude) in Electronics Engineering from the University of Naples “Federico II” in 2003. From August 2005 to May 2006 she has been working with STMicroelectronics, Arzano Naples, Italy, as a digital ASIC designer Since June 2008 he is with the Department of Electronics and Telecommunications Engineering, University of Naples “Federico II”. His present research interests included RF and electro-thermal modeling/characterization of bipolar transistors.
Salvatore Russo received the “laurea” degree in electronics engineering from the University of Naples “Federico II”, Naples, Italy, in 2007. Since November 2007 he is working towards his Ph.D. degree at the University of Naples “Federico II”. In April 2008, he joined as a visiting scientist the Laboratory of Electronic Components, Technology & Materials (ECTM) at the Delft University of Technology, Delft, The Netherlands, working on experimental characterization, simulation and modeling of electrothermal effects in silicon-on glass bipolar transistors.
Electrothermal Phenomena in Bipolar Transistors and ICs: Analysis, Modeling, and Simulation (invited) Rinaldi, N.; d'Alessandro, V.; De Paola, F.M.;Bipolar/BiCMOS Circuits and Technology Meeting, 2006 Oct. 2006 Page(s):1 - 8