The DOTFIVE project has set its goal at 500 GHz at room temperature, a performance usually thought only possible with III-V compound semiconductor technologies. A higher operating speed can open up new application areas at very high frequencies, or can be traded in for lower power dissipation, or can help to reduce the impact of process, voltage and temperature variations at lower frequencies for better circuit reliability. SiGe HBTs are key devices for high-frequency low-power applications. Compared to III-V compound semiconductor devices, they enable high density and low-cost integration making them suitable for consumer applications.
In order to achieve their goals, the DOTFIVE partners will team up for research and development work on silicon-based transistor architectures, device modeling, and circuit design. The project involves 15 partners from industry and academia in five countries.